摘要
设计了基于SILVACO-TCAD仿真工具的具有ITO/Si/Al结构太阳电池单元,研究了在此结构中pn结特性对光电流的影响。研究表明,pn结位置越浅,光电流越大;光电流随pn结中杂质浓度增加而先增加后减小,电流极值向短波方向移动。
Solar cells with the structure of ITO/Si/Al were designed based on the simulating tool of SILVACO-TCAD.The relationship between photocurrent and the characteristics of pn junction was investigated.The simulation results show that the lower the depth of pn junction is,the larger the photocurrent is;the photocurrent increases firstly and decreases latterly with the increase of the impurity concentration in pn junction,and the maximum point of photocurrent moves to the direction of short wave.
出处
《半导体光电》
CAS
CSCD
北大核心
2010年第4期583-585,共3页
Semiconductor Optoelectronics
基金
江苏省自然科学基金项目(BK2008184)
南通市科技项目(K2008016)
南通大学自然科学基金项目(05Z040,06Z035)
