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一种用于新型非制冷IRFPA读出电路的带隙基准源 被引量：2

A Bandgap Reference For A Novel Uncooled IRFPA Readout Circuit
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摘要 设计了一种用于新型非制冷IRFPA读出电路的高精度、无电阻带隙基准低电压源电路。该电路通过Buck’s电压转移单元代替电阻,并且采用正比与Tα的电流对VBE进行高阶补偿。在0.5μm CMOS工艺条件下,采用spectre进行模拟验证。模拟仿真结果表明:该电路结构具有较高的电源抑制比和低的温度系数:在电源电压从2.8 V变化到4.2 V时,输出电压波动小于3 mV;在0～75℃温度变化范围内,输出电压的最大变化范围为±0.75 mV。 A resistorless low voltage bandgap reference for a novel uncooled IRFPA readout circuit is presented,utilizing a Buck’s voltage transfer cell instead of resistors and a current proportional to Tα to provide a high order compensation of the VBE.The simulation with spectre was carried out using 0.5 μm n-well CMOS technology.The simulation results indicate that the proposed BGR circuit has a higher power supply rejection ratio and low temperature coefficient.The fluctuation of the output reference voltage is less than 3 mV when the power voltage changes from 2.8 V to 4.2 V and the output voltage of the new circuit had a maximum variation of ±0.75 mV in large range from 0℃ to 75℃.
作者 马娜 吕坚 蒋亚东
机构地区 电子科技大学电子薄膜与集成器件国家重点实验室
出处 《红外技术》 CSCD 北大核心 2010年第8期457-461,共5页 Infrared Technology
基金 国家自然科学基金项目 编号:60736005
关键词 CMOS带隙基准源 无电阻 低电压 CMOS bandgap reference resistorless low voltage
分类号 TN215 [电子电信—物理电子学]
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参考文献8

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共引文献32

同被引文献12

  • 1何乐平,王忆.模拟集成电路设计与仿真[M].北京:科学出版社,2008.
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  • 9De Vita G, Iannacone G. A sub-l-V, 10 ppm/ ℃, Nanopower Voltage Reference Generator [J]. Solid- State Circuits, 2007, 42(2): 1536-1542.
  • 10Ken Ueno, Tetsuya Hirose, Tetsuya Asai, et al. A 300 nW,15 ppm/℃, 20 ppm/V CMOS Voltage Reference Circuit Consisting of Subthreshold MOSEFTs [J]. Solid-State Circuits, 2009, 44(4): 2047-2054.

引证文献2

红外技术
2010年 第8期

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