纳米印章模板的制备及应用

Application and Fabrication of Nanoimprint Mold

利用PECVD生长技术制备a-Si/SiNx多层膜,利用解理技术获得干净平滑的截面.利用选择性化学腐蚀技术在横截面上制备出浮雕型一维纳米模板.通过控制多层膜子层的生长时间,得到线条宽度和槽状宽度均最小为20纳米的等间距模板,品质优于电子束制备的模板.以这种模板为基础,利用印章技术制作了硅基光栅.

A-Si/SiNx multilayer films were prepared by PECVD growth technology.Clean and smooth cross-section was acquired by using cleavage techniques.Nanoimprint mold was prepared by selective chemical etching on the cross-section.By altering the deposition time of the multilayer film the smallest width we get by now is the 20nm strips and 20nm pitches,which is better than that fabricated by electron beam lithography.The silicon-based grating was obtained by nanoimprint technique.