浮栅型单电子存储器的等效电路模型

Equivalent circuit model of Float Gate Single-Electron Memory

在介绍浮栅型硅量子点单电子存储器的结构与工作原理的基础上,通过分析建立了相应的集总电容电路模型,计算了存储器在线性、饱和、亚阈值情况下的电流。利用单电子器件的"阈值漂移"特性,可以得到纳米存储器在不同阈值电压下的存储状态。仿真表明,该模型可以准确地模拟存储器的"读"和"写"状态。

Based on analysis of structure and principle in floating gate silicon quantum dot single-electron memory, the lumped capacitance circuit model is obtained. In addtion, the currents is calculated under linear, saturated, sub-threshold circumstances. The storing states at different threshold voltages could be achieved using ＂threshold shift＂ feature of single-electron devices. Simulation results indicate that the model can accurately simulate memory ＂read＂ and ＂write＂ state.