溶胶-凝胶法制备ZnO:Sn(TZO)薄膜

Transparent conducting ZnO:Sn(TZO) films deposited by the sol-gel method

以普通玻璃为衬底,采用溶胶-凝胶旋涂法制备出c轴择优取向性、高可见光透过率以及低电阻率的ZnO：Sn（TZO）薄膜。利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、四探针及紫外-可见分光光度计（UV-VIS）等手段,研究了不同Sn掺杂浓度对薄膜的晶体结构、表面形貌、电学和光学特性的影响。实验结果表明,在500℃的空气中热处理,然后在低温环境快速冷却,得到的TZO薄膜均具有六角纤锌矿结构,且呈c轴择优取向,薄膜在可见光范围内平均透光率超过90%,同时当Sn掺杂浓度为3 at.%时,薄膜的电阻率达到最小值8.2×10-1Ω.cm。

Transparent and conductive high-preferential c-axis-oriented Sn-doped ZnO（TZO） thin films have been prepared on common glass substrates by sol-gel spin coating method.The influence of the structure on electrical and optical properties of TZO films are investigated by X-ray diffraction（XRD）,scanning electron microscopy（SEM）,four-point probe method and UV-VIS spectrophotometer,respectively.The result proved that the films are all polycrystalline with a structure of preferred orientation of c-axis ZnO hexagonal wurtzite type.All films show high transmittance of 90 % in the visible light range.The films doped with 3 at.% Sn concentration hold a highly preferred c-axis-oriented column shaped crystalline structure and exhibit the lowest resistivity of 8.2×10-1 Ω·cm.