微晶硅薄膜在粗糙表面的大面积均匀生长机制在

Large Scale Homogeneous Growth Mechanics of Microcrystalline Silicon Films on Rough Surface

用氩气稀释硅烷作为反应气体，利用感应耦合等离子体在廉价衬底上大面积均匀沉积微晶硅薄膜．X射线衍射和拉曼分析表明衬底能显著地影响晶向，且微晶砗薄膜由小晶粒组成．台阶仪测试表明，微晶硅薄膜具有大范围均匀的特点．探针分析表明衬底附近区域的离子密度及电子温度分布均匀．基于以上结果可知：粗糙表面在晶体结构形成具有重要的作用，电感耦合等离子体反应器可以大面积均匀沉积薄膜．此外，氩气能影响反应过程并提高微晶硅薄膜特性．

Large scale homogenous growth of microcrystalline silicon （μ.c-Si：H） on cheap substrates by inductively coupled plasma （ICP） of Ar diluted Sill4 has been studied. From XRD and Raman spectrum, we find that substrates can greatly affect the crystalline orientation, and the μc-Si：H films are comprised of small particles. Thickness detection by surface profilometry shows that the thin μc-Si：H films are homogenous in large scale. Distributions of both ion density and electron temperature are found to be uniform in the vicinity of substrate by means of diagnosis of Langmuir probe. Based on these experimental results, it can be proposed that rough surfaces play important roles in the crystalline network formation and Ar can affect the reaction process and improve the characteristics of μc-Si：H films. Also, ICP reactor can deposit the thin film in large scale.