一种基于Weibull函数的单粒子注入脉冲模型

Particle-Injected Model Based on Weibull Function

单粒子效应是当前集成电路抗辐射加固的研究重点之一.根据空间辐射粒子特点,提出一种基于Weibull函数的单粒子注入脉冲模型,该模型利用Weibull函数对瞬时脉冲直接进行电路级描述.实验证明,该模型与传统器件级电流注入脉冲模型的SER统计数据拟合度高达98.41%,同时可将电路模拟时间缩短3个数量级,在高速超大规模集成电路的单粒子效应研究中,具有明显的模拟速度优势,为深亚微米级的抗辐射加固研究提供了坚实的理论基础.

Single-Event Effect （SEE） is a hot research area in Integrate Circuits radiation hardening today. This paper put forward a particle-injected model based on Weibull function which characterized transient pulse directly. The experiment result proved that the precision of Weibull model come up to 98.41% compare with the current-pulse model, and it can improve simulation computer speed of circuits 3 orders. The model proposed in this paper has strong referenced value to study radiation hardened in VIii circuits.