宽禁带半导体材料技术

Investigation on Wide Bandgap Semiconductor Material

宽禁带半导体材料是一种新型材料,具有禁带宽度大、击穿电场高、热导率高等特点,非常适合于制作抗辐射、高频、大功率和高密度集成电子器件;利用其特有的禁带宽度,还可以制作蓝光、绿光、紫外光器件和光探测器件,能够适应更为苛刻的生存和工作环境。在宽禁带半导体材料中,具有代表性的是碳化硅(SiC)、氮化镓(GaN)、氮化铝(AlN)、金刚石以及氧化锌(ZnO),综合叙述了这些材料的特性、发展现状和趋势;并介绍了SiC、GaN、ZnO材料的应用情况和代表性器件的研究进展。

Wide bandgap semiconductor material is a kind of new materials, which are suitable for the production of anti-radiation, high-frequency, high power and high-density integration of electronic devices, due to wide-band gap, high breakdown electric field and high thermal conductivity. The blue , green and UV light emitter or optical detector made of WBG can adapt to a more hostile environment. SiC,GaN,AlN, diamond and ZnO are representative of WBG. In this paper, the characteristics and application of these materials were described, the development status was represented and the development trend was predicted.