磁性拓扑绝缘体中的量子化反常霍尔效应——无需外磁场的量子化霍尔效应

Quantized anomalous Hall effect in magnetic topological insulators

文章从平常霍尔效应出发,介绍了反常霍尔效应及其内秉物理机制,并在此基础上介绍了其量子化版本——量子化反常霍尔效应.然后从拓扑有序态的角度,重点讨论了量子化反常霍尔效应与量子霍尔效应、量子自旋霍尔效应、拓扑绝缘体等之间的区别与内在联系.最后介绍了通过在拓扑绝缘体(Bi2Se3,Bi2Te3和Sb2Te3)薄膜中掺杂过渡金属元素(Cr或Fe)实现量子化反常霍尔效应的方法.

We introduce the anomalous Hall effect and its intrinsic mechanism,and then discuss the quantized anomalous Hall effect（QAHE）.From the viewpoint of topological order,we focus on the differences and relationships among the quantum Hall effect,quantum spin Hall effect,QAHE,and topological insulators.Finally,we discuss the proposal that QAHE can be realized in thin films made of magnetic topological insulators such as Bi2Se3,Bi2Te3 and Sb2Te3 doped with Cr or Fe.