Co、Al共掺杂ZnO靶材溅射过程中离子与固体相互作用的模拟

Simulation of interaction between ions and solids in(Co,Al) co-doped ZnO sputtering target

根据随机碰撞过程中的级联碰撞原理,跟踪载能粒子在固体内的慢化过程,选用SRIM2008软件模拟了Co、Al共掺杂ZnO靶材在溅射过程中离子与固体相互作用.研究了溅射过程原子的选择性溅射现象,溅射原子的能量、角度分布情况,得出ZnO基靶材溅射过程中离子与固体相互作用的规律.欲获得成分接近Zn0.85Co0.1Al0.05O的薄膜,最佳的溅射工艺条件为:Ar+离子以68°的角度入射,靶材成分采用Zn0.7Co0.23Al0.07O.

By tracking the incidence particles in the solid based on the random cascade collision theory, the interaction between ions and solids in （Co, Al） co -doped ZnO target was simulated by using software package SRIM2008. The general rules for selective sputtering, distribution of energy, angle and position for sputtering atoms were obtained. The optimized sputtering conditions for ZnO - base targets were recommended in the following： the target with constituent Zn0 .7 Co0.23Al0.07O corresponds to the film with an approximate constituent Zn0.85Co0.1Al0.05O, and the incident ions is Ar＋ , the incident angle is 68°.