摘要
在有我们的很好确定的单身的参量的模型潜力的第二份订单以外的 pseudopotential 理论被采用计算全部的水晶精力，静态的体积模量，在Jones地区脸和 Si 的压力卷关系(在压力下面的状态的方程)上的点 X 的精力乐队差距，用 Nagy 的静态的本地域修正的 Ge 和 -Sn 工作。结果与那些相比使用很少获得另外的本地地修正功能。全部的精力的现在的结果在对试验性的数据的好同意。屏蔽功能完美地与 Ge 和 -Sn 的试验性的结果正在匹配的由 Nagy 的家计算的体积模量。一些偏差在精力乐队差距的价值被发现。
The pseudopotential theory beyond second order with our well established single parametric model potential is employed to compute total crystal energy, static bulk modulus, energy band gap at the point X on the Jones-zone face and pressure-volume relation （equation of state under pressure） of Si, Ge and α-Sn using Nagy＇s static local field correction function. The results are compared with those obtained using few other local field correction functions. The present results of total energy are in good agreement with the experimental data. Bulk modulus calculated by Nagy＇s screening function is perfectly matching with the experimental results for Ge and α-Sn. Some deviation is found in the value of energy band gap.
