摘要
本文对HFCVD过程中的气体状态参数空间场进行了模拟计算.结果表明,气体的温度,体密度,速度和质量流密度场是空间位置的函数,在合适的位置,可获得均匀的温度和质量流密度.这些结果可为制备大面积均匀金刚石薄膜时的工艺参数选择提供理论依据.
The space field of gas physical parameters was simulated during the hot-filament chemicalvapor deposition of diamond films. The results showed that the temperature, volume density, velocity andmass flow density of gas varied as space function in chamber and nearly uniform temperature and massflow density of gas existed in certain space. The results also provide a basis for selecting the technologicalparameters to Obtain uniform diamond films over a large area.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第6期648-653,共6页
Acta Metallurgica Sinica
基金
国家自然科学基金!59292800
辽宁省科委资助
关键词
金刚石薄膜
均匀生长
空间场
模拟计算
HFCVD
hot-filament chemical vapor deposition (HFCVD), diamond film, nucleation, uniformgrowth, space field, simulation