摘要
在316L不锈钢片表面上用离子束辅助沉积(IBAD)和溅射沉积加上离子注入方法制备Si-C薄膜.测量氚通过钢片的渗透率,并用XPS、AES、XRD及TEM等分析薄膜的成分和结构.结果表明,改性膜使不锈钢的氚渗透率降低近5个数量级.随着制备条件的不同,膜中的C/Si原子比不同.用双靶(Si,C)加C离子轰击的IBAD方法可得到较高的C/Si比.改性膜中形成了Si-C化学键,Si-和C-悬键的存在可能是捕陷氚使之不易扩散的原因.
St-C films were deposited onto thin plates of 316L stainless steel by ion beam assisteddeposition and/or ion implantation. The permeability of tritium through stainless steel plates was measuredand the composition and microstructure of the films were analyzed with XPS, AES, XRD and TEM.The results show that the modification with St-C films reduces the tritium permeability by 5 orders ofmagnitude. C/Si atomic ratio in the film depends on the conditions of preparation. Higher C/Si ratiocan be obtained with the deposition from both St and graphite targets and assisted by simultaneous C ionbombardment. It is found that some St-C chemical bonding has formed in the films. The existence ofcertain St-and C-dangling bonds is believed to be the origin of tritium trapping and retarded diffusion.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第6期654-658,共5页
Acta Metallurgica Sinica
基金
国家自然科学基金!59471053
中国工程物理研究院科学技术基金!920521100105007