多晶材料晶粒生长的Monte Carlo计算机模拟方法 Ⅰ 模拟正常晶粒生长

Monte Carlo Computer Methods for Simulating Grain Growth of Polycrystalline Material Simulating Normal Grain Growth

多晶固体材料的显微结构的演化与诸多因素密切相关，是一复杂的过程。运用适当的计算机方法进行模拟，完成对晶粒生长的完全预测，具有重要意义，且可为材料研究提供新的重要的依据。近年来，一些材料科学研究者运用蒙特卡罗（ＭｏｎｔｅＣａｒｌｏ）方法模拟二维晶粒生长，已取得了较大进展。本文对他们在模拟正常晶粒生长方面采用的基本方法进行综述。关于模拟异常晶粒生长的情况将在下一篇文章中介绍。

The microstructure evolution of grain growth is a complex procedure which is effected by many factors.The fundamental Monte Carlo methods for simulating normal grain growth in two dimensions had been briefly introduced in our last paper.The most direct reason for abnormal grain growth is the variation of total system energy.There are many factors which will bring about some changes in system energy.On the basis of emphatic analysis of the effect on the changes of system energy by the anisotropy of grain boundary energies and mobilities,this paper presents the basic methods for simulating abnormal growth.It provides an important idea to solve the problem of how to introduce the complexity of growth environment to the growth model and simulate grain growth further.