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Enhanced Dielectric Response in Mg-doped CaCu_3Ti_4O_(12) Ceramics 被引量:6

Enhanced Dielectric Response in Mg-doped CaCu_3Ti_4O_(12) Ceramics
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摘要 CaCu3Ti4O12 ceramics substituted by Mg for Ca were prepared by the solid state reaction method. The crystal structures, microstructures, and dielectric properties of the Ca1-xMgxCu3Ti4O12 ceramics were investigated. At lower doping concentrations, the substitution of Mg for Ca caused a decreased lattice constant, while at higher doping concentrations, some of the Mg dopants started to replace Ti and resulted in an increased lattice constant, and some could also replace Cu due to the similar ion radius between Mg and Cu ions. Mg doping was found to promote the grain growth of Ca1-xMgxCu3Ti4O12 ceramics during sintering. Grain boundary resistance of the Ca1-xMgxCu3Ti4O12 ceramics was found to be increased by Mg doping. Enhanced dielectric properties was observed in the Ca1-xMgxCu3Ti4O12 ceramics with x=0.05 for the frequency range from i kHz to 20 kHz. For other doping concentrations, the dielectric losses of Ca1-xMgxCu3Ti4O12 ceramics were generally lowered. CaCu3Ti4O12 ceramics substituted by Mg for Ca were prepared by the solid state reaction method. The crystal structures, microstructures, and dielectric properties of the Ca1-xMgxCu3Ti4O12 ceramics were investigated. At lower doping concentrations, the substitution of Mg for Ca caused a decreased lattice constant, while at higher doping concentrations, some of the Mg dopants started to replace Ti and resulted in an increased lattice constant, and some could also replace Cu due to the similar ion radius between Mg and Cu ions. Mg doping was found to promote the grain growth of Ca1-xMgxCu3Ti4O12 ceramics during sintering. Grain boundary resistance of the Ca1-xMgxCu3Ti4O12 ceramics was found to be increased by Mg doping. Enhanced dielectric properties was observed in the Ca1-xMgxCu3Ti4O12 ceramics with x=0.05 for the frequency range from i kHz to 20 kHz. For other doping concentrations, the dielectric losses of Ca1-xMgxCu3Ti4O12 ceramics were generally lowered.
出处 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2010年第8期682-686,共5页 材料科学技术(英文版)
基金 supported by the National Natural Science Foundation of China (Grant Nos.60661001,60844008) the Program for Changjiang Scholars and Innovative Research Team in University (No.IRT0730) the Program for Innovative Research Team of Nanchang University
关键词 ELECTROCERAMICS Dielectric properties CACU3TI4O12 SINTERING Electroceramics Dielectric properties CaCu3Ti4O12 Sintering
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同被引文献66

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  • 3刘鹏,贺颖,李俊,朱刚强,边小兵.添加Nb对CaCu_3Ti_4O_(12)陶瓷介电性能的影响[J].物理学报,2007,56(9):5489-5493. 被引量:14
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