磁性隧道结自旋极化电子隧穿的温度特性

The Temperature Dependence of the Spin-polarized Tunneling Electrons inthe Magnetic Tunnel Junction

基于自由电子模型，研究了铁磁金属／绝缘体（半导体）／铁磁金属（ＦＭ／Ｉ（Ｓ）／ＦＭ）隧道结自旋极化电子隧穿的温度特性。从结论可以定性地解释有关的实验现象。

Based on the free-electron model, we have investigated the temperature dependence of the spin-polarized tunneling electrons in the ferromagnet/insulator(semiconductor)/ferromagnet(FM/I(S)/FM) magnetic tunnel junction. The related experimental phenomenon can be explained by our conclusion.