InP系波导和光电探测器的单片集成器件制作

The Fabrication of Monolithic Integration of InP Optical Waveguide and Photodetector

报道了应用液相外延（ＬＰＥ）方法，制作了ＩｎＰ／ＩｎＧａＡｓＰ／ＩｎＧａＡｓ半导体光波导和ＩｎＧａＡｓ－ＰＩＮ光电探测器的单片集成器件。

The fabrication of monolithic integration of InP/InGaAsP/InGaAs semiconductor optical waveguide and InGaAs PIN photodetector using liquid phase epitaxy(LPE) method is reported. The principal paraneters representing the performance of this device are closed to the level of foreign devices.