纳秒激光加工生成网孔硅的发光

Properties of Emission on Si Hole-net Structure

我们分别在氧气、氮气或空气等不同氛围中用纳秒脉冲激光在硅基上加工生成网孔结构,发现这些样品有增强的PL发光,且各样品的PL峰很相似。通过第一性原理计算,发现各种网孔结构表面的成键类型与密度是形成PL发光增强的关键,并由此提出相应的物理模型。

Meshes can be formed by nanosecond laser irradiation on silicon samples in the oxygen, nitrogen and air. The increasing PL emerged at 700nm wavelength, primary principle shows that bond- kinds and bonds＇ and every PL peak is similar to each other. Calculation of density of surface structure play an important role. We propose a physical model to explain above structures.