摘要
在高真空中用热蒸发的方法沉积了碲锗铅(Pb_(1-x)Ge_xTe)薄膜。分析了基片表面状态(粗糙度、晶向、温度)对膜层结构和红外光学特性的影响,发现光滑表面容易得到致密膜层和高红外折射率;随着沉积温度的增加,膜层的短波吸收边(λ_c)往长波方向移动。
Pb1-xGexTe films were deposited on Si substrates via thermal evaporation in vacuum. The influence of the surface status（roughness,temperature,crystal orientation） of the substrates on the infrared optical characteristics of the films was analyzed.It was found that denser layers with higher refraction index were easy gained on smooth substrate surfaces.With the increase of the deposition temperature,the short wave absorption edge（λc） of the film would shift toward longer wavelengths.
出处
《红外》
CAS
2010年第9期14-17,共4页
Infrared
