有机介质层铟锌氧化物薄膜晶体管

Organic Dielectric Indium Zinc Oxide Thin Film Transistors

利用直流磁控溅射方法在玻璃基板上室温制备非晶铟锌氧化物半导体薄膜,薄膜表面平整。采用旋涂法室温制备聚四乙烯苯酚有机介质层。以铟锌氧化物薄膜作为沟道层、聚四乙烯苯酚作为介质层,成功制备了顶栅结构的薄膜晶体管。测试结果表明,所制备的薄膜晶体管具有饱和特性且为耗尽工作模式,薄膜晶体管的阈值电压为3.8V,迁移率为25.4cm2.V-1.s-1,开关比为106。

Amorphous indium zinc oxide thin films were prepared by direct current magnetron sputtering on glass substrates at room temperature. The organic dielectric layer poly （4- vinylphenol） were prepared by spin coating method. With IZO films as channel layers, poly （4-vinylphenol） as dielectric layers, thin film transistors were fabricated at room temperature, showing depleted mode operation with good saturation characteristics, threshold voltage of 3.8 V, mobility of 25.4 cm^2·V^-1·s^-1 and on/off ratio of 106. This shows organic dielectric layer indium zinc oxide thin film transistor can be prepared at low temperature.