基于In-Zn-Ti-O氧化物半导体材料的薄膜晶体管

Thin Film Transistors Based on In-Zn-Ti-O Oxide Channel Layer

在室温下制备了基于In-Zn-Ti-O氧化物半导体的薄膜晶体管,氧化物沟道层中In、Zn、Ti的摩尔比为49∶49∶2。所制备的器件场致迁移率达到9.8cm2/V.s,开关比大于105,亚阈值摆幅0.61V/dec。和未掺Ti器件的比较表明,掺Ti能使器件阈值正向变化,对场致迁移率也有提高作用。

Thin film transistors based on In-Zn-Ti-O oxide channel layer were fabricated at room temperature.The atomic proportion of In,Zn and Ti in channel layer is 49∶49∶2.The device with field effect mobility of 9.8 m2/V·s,on-off ratio higher than 105 and subthres-hold swing of 0.61/dec was obtained.While compared with devices without Ti doping,it is found that Ti-doping increases the threshold voltage in the positive direction and improves the field effect mobility of the devices.