摘要
以GaAs/Ga1-xAlxAs为例,在有效质量的近似下,讨论了双抛量子阱中类氢杂质的结合能.结果表明:(1)双方量子阱中类氢杂质的结合能是双抛阱中杂质结合能的1.3倍;(2)无论杂质在阱中还是垒中,不仅垒宽和阱宽影响其结合能。
Considering the effective mass appoximation and taking the GaAs/Ga 1 x Al x As for example,we investigate the binding energy of a hydrogenic impurity in the double parabolic quantum well(DPQW).The results show that: (1)The binding energy of a hydrogenic impurity in the double square quantum well (DSQW) is about 1.3 times larger than in DPQW;(2)No matter where the shallow donor is, the barrier thickness( L b),the well width ( L W) and the donor composition( x )all affect the binding energy( E b)greatly.
出处
《河北师范大学学报(自然科学版)》
CAS
1999年第2期209-214,共6页
Journal of Hebei Normal University:Natural Science
关键词
类氢杂质
结合能
量子阱
双抛量子阱
半导体
hydrogentic impurity
binding energy
double square quantum well (DSQW)
double parabolic quantum well (DPQW)