摘要
对无序和有序GaInP2样品分别作了变温和变激发功率密度光致发光谱的测量.无序样品表现为与激发功率密度无关的单谱峰结构,在不同温度区有不同的激活能.有序样品则表现为双峰结构,其中高能端发光峰强度随温度升高先增强而后热猝灭.
Temperature
dependent and excitation intensity dependent photoluminescence spectra of both disordered
and ordered GaInP 2 are measured. The disordered sample is characterized by its single peak
photoluminescence spectrum, which is excitation intensity independent and has different
activation energy at different temperature region, while the ordered sample shows double peaks
structure. As the temperature increased, the intensity of high energy peak increased
anomalously at first and quenches afterwards. The experimental phenomena are reasonably
explained in terms of lattice ordering and orientation superlattice model.
出处
《厦门大学学报(自然科学版)》
CAS
CSCD
北大核心
1999年第3期362-365,共4页
Journal of Xiamen University:Natural Science
基金
国家自然科学基金
中科院上海技术物理所开放课题