双辅助光作用下半导体光放大器性能分析(英文)

Performance analysis of semiconductor optical amplifier under double assist light injection near transparency wavelength

半导体光放大器以其良好的非线性在全光网络中具有广泛应用,但较长的载流子恢复时间一直是制约其用于超快全光信号处理的速率瓶颈,基于包含自发辐射噪声的半导体光放大器模型,探讨了提高半导体光放大器增益恢复时间的有效途径,通过对制约透明波长移动,增益饱和与有效载流子寿命的相关因素进行数值分析,得出以下结论:与单辅助光相比,采用双辅助光可以在不牺牲信号增益的前提下进一步缩短载流子寿命,因而是提高半导体光放大器增益恢复时间的有效途径,这一点对工程设计和应用具有一定的指导意义。

A theory model was presented,which account for the impacts of amplified spontaneous emission and double continuous-wave assist light beams on the carrier dynamics in a semiconductor optical amplifier（SOA）,and was used to numerically simulate transparency wavelength shift,gain saturation and effective carrier lifetime variation.Firstly,as a verification of the model,the dependence of transparency wavelength on both probe wavelength and probe power was provided.This numerical result was in agreement with the previous experiment.Secondly,based on this temporal gain dynamics model,the SOA behaviors of gain saturation and effective carrier lifetime under double assist light beams separately near material and device transparency wavelengths were investigated.It is demonstrated that the saturation output power and the gain recovery time can be greatly improved by using double assist light injection without sacrificing the available SOA gain compared with the scheme of single assist light injection.These simulation results suggest that using double assist light beams near transparency wavelength are useful for improving SOA performance in ultrafast photonic networks.