铟铈铜铌酸锂晶体光谱特性及抗光损伤能力

Optical damage resistant ability and spectrum properties of In:Ce:Cu:LiNbO_3 crystals

在铌酸锂LiNbO3(LN)中掺入0.1 mol%CeO2,0.1 mol%CuO和0.5 mol%、1 mol%和1.5 mol%In2O3,用Czochralski技术生长In:Ce:Cu:LN晶体。利用Avatar-360型FT-IR红外光谱仪测试了晶体的红外光谱,发现In(3 mol%):Ce:Cu:LN晶体的OH-吸收峰由LN的3 484 cm-1移到3 508 cm-1。利用WFZ-26A型紫外-可见光分光分度计测试了晶体的紫外可见光谱,发现当In掺量小于3 mol%时,随In掺量的增加,基础吸收边向短波方向移动,即发生紫移,在掺入量达到3 mol%时,基础吸收边红移。采用透射光斑畸变法测试了晶体的抗光损伤能力,结果表明:In(3 mol%):Ce:Cu:LN晶体的抗光损伤能力比其他样品明显增强,较Ce:Cu:LN晶体的抗光损伤能力高出两个数量级。探讨了In:Ce:Cu:LN晶体OH-吸收峰及基础吸收边移动和抗光致散射能力增强的机理。

In：Ce：Cu：LiNbO3（In：Ce：Cu：LN） crystals doped with 0.1 mol% CeO2,0.1 mol% CuO and with 0.5 mol%,1 mol% and 1.5 mol% In2O3 were grown by the Czochralski method.The infrared spectra of the crystals were tested by Avatar-360 model FT-IR spectrometer.It was found that the OH-absorption peak of 3 mol% In：Ce：Cu：LN crystal was shifted from 3 484 cm-1 of pure LN to 3 508 cm-1.The ultraviolet visible（UV-VIS） spectra of the samples were analyzed by WFZ-26A model UV-VIS spectrometer.The results indicate when the doping concentration of In is below 3 mol%,the absorption edges of In：Ce：Cu：LN crystals shift to the blue with the increase of In doping concentration.When in doping concentration reaches 3 mol%,the absorption edge of In（3 mol%）：Ce：Cu：LN crystal in turn shifts to the red.The optical damage resistance ability of In：Ce：Cu：LN crystals were measured by the faculardistortion observation method.Compared with other samples,the optical damage resistance ability of 3 mol% In：Ce：Cu：LN crystal is obvious increased and about 2 orders of magnitude compared with that of Ce：Cu：LN.The mechanisms of the OH-absorption peak,the absorption edges shift and enhancement of the optical damage resistance ability of In：Ce：Cu：LN crystal were investigated.