HeLa S3 DNA转染后XP细胞UV抗性的稳定增加和切除修复基因的定位探索

The Stable Increase of UV Resistance in XP Cells by HeLaS3 DNA Transfection and the Location of Excision Repair Gene

通过带有选择标志的质粒pSV_2Neo的基因共转染和第一轮转化的XP细胞DNA的再转染,进一步证明了前文报道的HeLaS3 DNA的切除修复基因在XP细胞中的稳定表达,以及受体细胞UV抗性的稳定增加。通过五种限制性核酸内切酶酶切DNA片段的转染,初步寻找出切除修复基因位于Bg1 Ⅰ,xhoⅠ 酶切片段之中。

By plasmid marker gene cotransfer and the secondary transfection with the transformed XP cell DNA, the HeLaS3 DNA was further proved to be stably integrated into the chromosome of XP cells and able to confer UV resistance to the recipient cells, as reported in the previous paper. The experimental results also showed that the gene responsible for the excision repair [of UV damage located inside the Bgl Ⅰ and Xho Ⅰ digested HeLaS3 DNA fragments.