LDMOSFET电热耦合解析模型

Analytical Electro-thermal Model for RF-LDMOSFET

建立了包含电热耦合相互作用的大信号非线性射频LDMOSFET解析模型—Agereelectro-thermal transistor(AET)模型,包括:模型的拓扑图、等热和脉冲器件测试表征系统、模型参数的提取过程。在Agilent的电子设计工具软件ADS中植入和实现了该模型,并将其应用于实际射频功率放大器的设计,通过测量验证了该模型的正确。

This paper presents the model development of Agere eletro-thermal transistor, an electro-thermal large signal nonlinear RF-LDMOSFET model used in radio frequency （RF） power amplifiers （PAs）. We first describe our model schematics, then the iso-thermal and pulsed device characterization systems used in the parametrization of the model are described. The extraet- ed model is implemented in Agilent＇s Advanced Design System （ADS） for the development of several PAs. Finally, the model accuracy is measured by comparing several experimental verifications of physical chips against those of EDA designs.