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应用于无线传感网络的2.4GHz低噪声放大器 被引量:1

A 2.4 GHz Low Noise Amplifier for Wireless Sensor Network
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摘要 采用SMIC0.13μmRFCMOS工艺设计,并实现了应用于无线传感网络的2.4GHz差分低功耗低噪声放大器。在低功耗约束下,电路采用差分共源共栅源极退化电感结构。考虑了ESD保护PAD和封装等寄生电容,分析了输入阻抗匹配、增益、噪声和线性度,提出了低功耗条件下输入阻抗匹配和噪声优化措施。芯片测试结果显示,噪声系数NF为2.5dB,输出采用片外无源网络匹配下功率增益S21为9.4dB,输入三阶交调点IIP3为-1.5dBm。在1.2V电源电压下消耗电流3.3mA。芯片面积为860μm×680μm。 A 2.4 GHz differential low power low noise amplifier for wireless sensor network is designed and realized in SMIC 0. 13 μm RF CMOS process. Under the constraint of low power, the inductively degenerated common-source common-gate low noise amplifier is adopted. With the consideration of parasitic capacitor of ESD protection PAD and package, the input matching network, voltage gain, noise figure and linearity are analyzed, and the optimization of input matching network and noise figure are proposed. Measurement results show noise figure of 2.5 dB, power gain of 9.4 dB, input-referred third-order intercept point of--1.5 dBm while consuming 3.3 mA from a 1.2 V supply. The die area is 860)〈680μm^2.
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2010年第3期396-401,共6页 Research & Progress of SSE
基金 国家科技支撑计划课题资助(2008BAI55B07)
关键词 射频 低噪声放大器 无线传感网络 噪声系数 寄生电容 radio frequency low noise amplifier wireless sensor network noise figure parasitic capacitor
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参考文献11

  • 1Tubaishat M,Madria S J.Sensor networks:anoverview[J].IEEE Potentials,2003,22(2):20-23.
  • 2Jhon Hee-Sauk,Song Ickhyun,Kang In Man.2.4 GHz ISM-band receiver design in a 0.18 μm mixed signal CMOS process[J].IEEE Microwave and Wireless Components Letters,2007,17 (10):736-738.
  • 3Chi Baoyong,Shi Bingxue,Wang Zhihua.A 2.4 GHz CMOS monolithic transceiver front-end for IEEE 8.02.11b wireless LAN applications[J].Chinese Journal of Semiconductors,2005,26(9):1731-1739.
  • 4Lu Lianghung,Hsieh Hsiehhung,Wang Yushun.A compact 2-4/5.2-GHz CMOS dual-band low-noise amplifier[J].IEEE Microwave and Wireless Components Letters,2005,15(10):373-377.
  • 5Kaamouchi M E,Moussa M S,Delatte P,et al.A 2.4-GHz fully integrated ESD-protected low-noise amplifier in 130-nm PD SOl CMOS technology[J].IEEE Trans Microwave Theory Tech,2007,55 (12):2822-2831.
  • 6Sivonen P,Parssinen A.Analysis and optimization of packaged inductively degenerated common-source lownoise amplifiers with ESD protection[J].IEEE Trans Microwave Theory Tech,2005,53(4):1304-1313.
  • 7Nguyen T K,Kim C H,Lee S G.CMOS low-noise amplifier design optimization techniques[J].IEEE Trans Microwave Theory Tech,2004,52 (5):1433-1442.
  • 8Goo J S,Ahn H T,Ladwig D J,et al.A noise optimization technique for integrated low-noise amplifiers[J].Journal of Solid-state Circuits IEEE,2002,37 (8):994-1002.
  • 9Kang S,Choi B,Kim B.Linearity analysis of CMOS for RF application[J].IEEE Trans Microwave Theory Tech,2003,51(3):972-977.
  • 10Rola A,Tsang T,Mourad N.Distortion in RF CMOS short-channel low-noise amplifiers[J].IEEE Trans Microwave Theory Tech,2006,54 (1):46-56.

同被引文献5

  • 1李志升,李巍,胡嘉盛,苏彦锋,任俊彦.1.9GHz CMOS低噪声放大器的结构分析与设计[J].微电子学,2006,36(2):220-224. 被引量:3
  • 2SHAEFFERD K, LEE T H. A 1. 5 V, 1. 5 GHz CMOS low noise amplifier [J]. IEEE J Sol Sta Circ, 1997, 32(5): 745-759.
  • 3BELOSTOTSKI L, HASLETT J W. Noise figur optimization of inductively degenerated CMOS LNA with integrated gate inductors [J]l IEEE Trans Cir Syst-I: Reg Pap, 2006, 53(7): 1409-1422.
  • 4LEROUX P, JANSSENS J, STEYAERT M. A 0.8- dB NF ESD-protected 9-mW CMOS LNA operating at 1.23 GHz [J]. IEEE J Sot Sta Cite, 2002, 37(6): 760-765.
  • 5GRAMEGNA G, PAPARO M, ERRATICO P G, et al. A sub-l-dB NF -4-2.3 kV ESD-protected 900MHz CMOS LNA [J]. IEEE J Sol Sta Circ, 2001, 36(7) : 1010-1017.

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