摘要
采用SMIC0.13μmRFCMOS工艺设计,并实现了应用于无线传感网络的2.4GHz差分低功耗低噪声放大器。在低功耗约束下,电路采用差分共源共栅源极退化电感结构。考虑了ESD保护PAD和封装等寄生电容,分析了输入阻抗匹配、增益、噪声和线性度,提出了低功耗条件下输入阻抗匹配和噪声优化措施。芯片测试结果显示,噪声系数NF为2.5dB,输出采用片外无源网络匹配下功率增益S21为9.4dB,输入三阶交调点IIP3为-1.5dBm。在1.2V电源电压下消耗电流3.3mA。芯片面积为860μm×680μm。
A 2.4 GHz differential low power low noise amplifier for wireless sensor network is designed and realized in SMIC 0. 13 μm RF CMOS process. Under the constraint of low power, the inductively degenerated common-source common-gate low noise amplifier is adopted. With the consideration of parasitic capacitor of ESD protection PAD and package, the input matching network, voltage gain, noise figure and linearity are analyzed, and the optimization of input matching network and noise figure are proposed. Measurement results show noise figure of 2.5 dB, power gain of 9.4 dB, input-referred third-order intercept point of--1.5 dBm while consuming 3.3 mA from a 1.2 V supply. The die area is 860)〈680μm^2.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2010年第3期396-401,共6页
Research & Progress of SSE
基金
国家科技支撑计划课题资助(2008BAI55B07)
关键词
射频
低噪声放大器
无线传感网络
噪声系数
寄生电容
radio frequency
low noise amplifier
wireless sensor network
noise figure
parasitic capacitor