摘要
采用0.18μm CMOS工艺设计并制作了一款应用于便携式UHFRFID阅读器的射频发射前端电路。所设计的有源I/Q上混频器通过开关控制Q支路的信号输入,实现了EPC Global Class-1Gen-2协议中所要求3种调制方式;驱动放大器通过实现增益7级数字可调有效地预放大混频器的输出信号。在1.8V的电源电压下,测得阅读器前端电路的主要性能参数如下:上混频器的输入端P1dB,达到-14.9dBVrms,转换增益和噪声系数分别为3.18dB和13.20dB;驱动放大器的输出端P1dB在50Ω阻抗上达到3.5dBm,转换增益可调范围和噪声系数变化范围,分别为7.90～16.30dB和3.10～5.00dB。
A transmitter front-end circuit applied in the portable UHF RFID reader is designed and fabricated in 0. 18μm CMOS process. The designed active I/Q up-mixer can realize all three modulation schemes specified in EPC Global Class-lGen-2 protocol by switching the input signals of Q branch. With the realization of seven-class digitally adjustable conversion gain, the driver amplifier can effectively pre-amplify the output signals of up-mixer. Measured at 1.8 V power supply, the major performance parameters of the transmitter front-end circuit are described as follows： the up-mixer achieves -14.9 dB Vrms input-referred Pl dB, 3.18 dB conversion gain and 13.20 dB NF, and the DA features 3.5 dBm output-referred P1 dB at 50Ω, 7.90-16.30 dB conversion gain variation, and 3.10-5.00 dB NF range.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2010年第3期402-407,共6页
Research & Progress of SSE
基金
上海AM基金资助项目(07SA04)
上海市科委资助项目(08706200802)
上海重点学科建设项目(B411)
