摘要
对一种适用于106.68cm PDP扫描驱动IC的HV-PMOS器件进行了分析研究。通过使用TCAD软件对HV-PMOS进行了综合仿真,得到了器件性能最优时的结构参数及工艺参数。HV-PMOS器件及整体扫描驱动IC在杭州士兰集成电路公司完成流片。PCM(Process control module)片上的HV-PMOS击穿电压达到了185V,阈值为6.5V。整体扫描驱动芯片的击穿电压达到了180V,满足了设计要求。
A HV-PMOS for 106.68 cm PDP scan drivers IC is studied and designed. The device functions such as the level shift transistor and its breakdown voltage are of the greatest concern. The structure and process parameters are studied by TCAD simulations. The HV-PMOS and the scan driver IC are taped out in Silan. BVds of HV-PMOS on PCM is 185 V and the thresh-old voltage is 6.5 V. The breakdown voltage of the chip reaches up to 180 V, satisfying the design requirement.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2010年第3期436-440,共5页
Research & Progress of SSE
基金
浙江省科技计划资助项目(2004C31094)
