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集成磁电子器件研究 被引量:4

Research on Integreted Magnetoelectronic Components
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摘要 介绍了国内外几种先进的磁电子器件的原理及关键技术,包括GMR传感器、磁电耦合器件和磁性随机存储(MRAM)器件,并对市场前景和研发方向进行了展望。 This paper introduces the principle and key technology of several advanced magnetoelectronic components, including GMR sensors, magnetoelectric coupling and magnetic random memory access (MRAM) components. The market and research trends are also prospected.
出处 《计算机与数字工程》 2010年第9期59-61,共3页 Computer & Digital Engineering
关键词 磁电子器件 GMR 磁电耦合 磁性存储 magnetoelectronic components, GMR, magnetoelectric coupling, magnetic random memory access
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  • 1Baibich M N,Broto J M,Fert A.Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattice[J].Phys.Rev.Lett.,1991,61:4774-4779.
  • 2Julliere M.Tunneling between ferromagnetic films[J].Phys.Lett.A,1975,54:225-226.
  • 3都有为.应重视自旋电子学材料与器件的研究[C] //第十三届全国磁学磁性材料会议(大会主席报告),2008.
  • 4Daughton J M.GMR applications[J].Journal of Magnetism and Magnetic Materials,1999,192:334-342.
  • 5Qian Z H,Baubock G,O'Connel B.Giant Magnetoresistance Resistor and Sensor Apparatus and Method:US Patent[P].11/763,560,2008.
  • 6Fayfield R T,Hazelton T,Popple T.Novel Galvanic Isolation Based on Spin Valve GMR Magnetic Field Sensors[C] //Proceedings of the Thirteenth Biennial University/Government/Industry Microelectronics Symposium,Piscatatway,USA,1999.
  • 7Qian Z H,Wang D X,Daughton J.Magnetic Signal Isolators Employing Linear Spin-Valve Sensing Resistors[J].Journal of Applied Phsics,2003,93:6870-6872.
  • 8Slonczewski C.Current-driven excitation of magnetic multilayers[J].J.Magn.Magn.Mater,1996,159:1.

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