工艺参数对离子束溅射ZnO∶Al薄膜结构与性能的影响

Structural and Property Characterization of ZnO∶Al Films Grown by Ion Beam Sputtering

以ZnO(掺杂2%Al2O3)陶瓷靶作为靶材,采用离子束溅射技术在BK7玻璃基底上制备AZO透明导电薄膜。研究不同工艺参数对ZnO∶Al(AZO)薄膜结构与光电性能的影响。结果表明,不同等离子体能量下制备的AZO薄膜均出现ZnO(002)特征衍射峰,具有纤锌矿结构且c轴择优取向;AZO薄膜的结晶质量和性能对基底温度有较强的依赖性,只有在适当的基底温度下,可改善结晶程度且利于颗粒的生长,呈现较低的电阻率;不同厚度的AZO薄膜均出现较强的ZnO(002)特征衍射峰且随着厚度的增加,ZnO(110)峰强度不断加强,相应晶粒尺寸变大,但缺陷也随之增多;同时得出利用离子束溅射方法制备AZO薄膜的最佳工艺为:等离子体能量为1.3 keV、基底温度200℃和沉积厚度为420 nm,该参数下制备的薄膜结晶程度较高、生长的颗粒较大,相应薄膜的电阻率较低且薄膜透射率在可见光区均达到80%以上。

The ZnO：Al （AZO） films were deposited by ion beam sputtering of the ceramic target of ZnO doped with 2% （wt.） A1203 on BK7 glass substrates. The impacts of the deposition conditions on the film growth were experimentally studied. The micmstructures and properties of the AZO films were characterized with X-my diffraction, atomic force microscopy and conventional surface probes. The results show that the plasma power, substrate temperature and film thickness affect the AZO growth to a varying degree. For instance,as the thickness increases,the Zn（002） peak goes higher, coinciding with growth of ZnO grains, surface roughening and defects formation. The optimized AZO film growth conditions are found to be：a plasma power of 1.3 keV,a substrate temperature of 200 ℃ and a thickness of 420 nm.