深亚微米结构下的IC设计的电磁干扰(EMI)问题

The EMI of IC Design under the Structure of Deep Sub-Micron

在深亚微米结构下,集成电路IC的线路延迟和电磁干扰现象对于系统的影响更加突出,尤其是对超大规模集成(VLSI)电路系统。本文仅就深亚微米结构下IC设计的电磁干扰问题,详细分析了其产生的主要来源:宇宙射线、噪声干扰和静电放电ESD,以及预防措施。

Under the structure of deep sub-micron,the influnce of the delay of circuit and the EMI in the design of IC system has been becoming more and more serious,especially for the VLSI system.This article just detailedly analyzes the main origin of the EMI：the cosmic rays.the noises and ESD.and proposes/gives some advice to prevent the EMI.