一种NAND型三维多层1TXR阻变存储器设计

NAND Type 3D Multi-Layer RRAM Using Stackable 1TXR Memory Cell

随着存储器市场逐渐受消费电子的驱动,对高密度低成本的存储需求正在不断增加。阻变存储器正在成为新型非挥发存储器的研究热点。提出一种适用于未来高密度应用的与非(NAND)型共享选通管的三维多层1TXR阻变存储器概念。在0.13μm工艺下,以一个使用8层金属堆叠的1T64R结构为例,其存储密度比传统的单层1T1R结构高500%。提出了相关的读写操作方法来防止由漏电流造成的误写和误读并且降低功耗。

There＇s more need for low cost high density storage with the growing of storage market driven by commercial electronics. RRAM is becoming a hot research issue of novel non-volatile memory. A novel NAND type 3D RRAM concept is reported using stackable multi-layer 1TXR memory cell structure for future high density application. An 8-layer metal of stacked 1TXR （X = 64） is used as an example, the density is over 500%, higher than that of the conventional single layer 1T1R structure with 0.13 ttm process. Corresponding operation algorithm is put forward to inhibit mis-write and mis-read caused by sneaking current and reduce power consumption.