Ga_(1-x)Al_xAs-GaAs-Ga_(1-y)Al_yAs超晶格势阱中类氢杂质基态的束缚能

Binding Energy of the Ground State of Hydrogenic Impurity in the Ga1-xAlxAs-GaAs-Ga1-yAlyAs Supperlattice

介绍刘振鹏提出的关于有限深势阱类氢杂质态的三维薛定谔方程化为利于计算机求数值解的一维薛定谔方程的基本思想，并应用该方法计算了Ｇａ１－ｘＡｌｘＡｓ－ＧａＡｓ－Ｇａ１－ｙＡｌｙＡｓ超晶格类氢杂质态的基态束缚能，给出了ｘ＝０．３，ｙ＝０．６，及ｘ＝０．６，ｙ＝０．３时，杂质在不同位置的基态束缚能结果。该结果比Ｔａｎａｋａ的结果精确。

The basic thought is introduced which is proposed by Liu Zhenpeng on the method of a one-dimensionalization of the schrdinger equation for a hydrogenic impurity in a finite quantum well using the variational principle, the ground-state energies of hydrogenic imurity in potential well consiting of Ga1-xAlxAs-GaAs-Ga1-yAlyAs structure is calculated when the impurity is at different positions by using this method. In calculations, the values x=0.3, y=0.6 and x=0.6, y=0.3 is adopted.