硫脲在铜阴极电沉积中的作用

INFLUENCE OF THIOUREA ON CATHODIC ELECTRODEPOSITION OF COPPER

用电位阶跃法，得出产生光滑铜沉积时硫脲（ＴＵ）的最佳浓度范围为１０ｍｇ／Ｌ。由电解制样，并对样品进行Ｘ射线衍射、ＳＥＭ测试，结果表明，硫脲的存在使沉积表面颗粒细化，但其浓度大于２０ｍｇ／Ｌ时会造成“突出”生长，从而显著影响沉积织构及沉积生长类型。Ｘ射线光电子能谱（ＸＰＳ）分析表明，铜沉积中的“硫”主要来自硫脲。

The smooth copper deposition has been investigated by potentiostatic steps method, and the obtained optimum concentration of thiourea in electrolyte is 10 mg/L. The results of XRD and SEM for electrolysis sample showed that the thiourea makes the grains fine on deposit surface, and obviously affects the texture and growing structure type of copper deposit when the concentration of thiourea is more than 20 mg/L. The results of XPS analysis showed that the sulphur in copper deposit is of thiourea origion.