p型高阻CdZnTe晶体表面接触的电学性能研究

ELECTRICAL PROPERTIES OF CONTACTS ON p-TYPE CdZnTe CRYSTAL SURFACE

用原子力显微镜（ＡＦＭ）研究了ｐ型高阻Ｃｄ０．８Ｚｎ０．２Ｔｅ晶体表面状况对接触电学特性的影响，研究了三种金属（Ａｎ、Ａｌ、Ｉｎ）和ＡｕＣｌ３作为接触层材料的电学特性和接触机理。研究表明采用化学方法沉积ＡｕＣｌ３膜能在ＣｄＺｎＴｅ光滑表面形成一层重掺杂层（ｐ＋），较金属更易获得欧姆接触，热处理可改善接触的欧姆性，并增强接触层与晶体表面的结合力。

Effects of surface treatments of p-type Cd0.8Zn0.2Te crystals on the electrical properties of contacts are studied by Atomic Force Microscopy (AFM). The electrical properties and mechanism of contacts using vacuum deposited An, Al, In and electroless platted An as contacting layers are alsostudied. It has been shown that electroless platted An film can form a heavily doped p+ layer onCd0.8Zn0.2Te smooth surface, and the ohmic contact on 'type Cd0.8Zn0.2Te can be easily obtainedusing electroless platted Au than that using vacuum deposited An, Al and In. The post-annealingtreatment of electroless platted An film can improve the ohmic quality of contacts and enhance theadhesion between contacting layer and Cd0.8Zn0.2Te crystal surface.