摘要
采用ＴＥＭ观测与Ｘ射线双晶回摆曲线检测化学腐蚀逐层剥离深度相结合的方法，分析了ＳＩＧａＡｓ晶片由切、磨、抛加工所引入的损伤层深度。比较两种方法测量结果上的差异，得出了ＴＥＭ观测到的只是晶片损伤层厚度。
The surface damage Layer in the SIGaAs wafer induced by cutting, grining and polishing was analyzed by means of transmission electron microscopy and Xray rocking curve measurements after the wafer was chemically etched. A method for determining the depth of surface damage layer of SIGaAs wafer according to the quantitative difference in the results obtained by the two methods is proposed.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
1999年第4期241-244,共4页
Chinese Journal of Rare Metals
关键词
砷化镓
切片
磨片
抛光片
表面损伤层
晶片
SIGaAs, Cutting wafer, Grinding wafer, Polishing wafer, Surface damage
