摘要
硅半导体元件／伏安特性合格率
The regularity and mechanism of five typical V I characteristics varying with temperature of silicon device,and the relativity between V I characteristics and qualified rate of high temperature are studied.The approach of improving the qualified rate is presented.
出处
《电力电子技术》
CSCD
北大核心
1999年第3期54-56,共3页
Power Electronics
关键词
伏安特性
合格率
高温
硅器件
半导体器件
silicon semiconductor device
V I characteristic
qualified rate
