预置层退火温度对CIGS薄膜晶体结构与光学性质的影响

Influence of precursor’s annealing temperature on crystal structure and optical properties of CIGS thin films

在众多有关CIGS薄膜的制备实验条件中,温度是影响薄膜生长的重要因素之一。实验利用三步共蒸法在常温下沉积CIGS薄膜,而后对每一步制得的预制膜真空退火处理,系统研究了预置层退火温度对CIGS薄膜的晶体结构、表面形貌及光学性质的影响。研究表明,三步共蒸法中预置层退火温度应严格控制在350℃左右,有利于制备出单一黄铜相结构的CIGS薄膜,近红外波段光学反射率低至2%以下。

Temperature is always an important influencing factor on CIGS thin film growth no matter what experimental conditions are provided for the preparation of the thin films.With the three-step co-evaporation process,the CIGS thin films were deposited at room temperature then annealed in vacuum at different temperatures at every step.The influence of precusor＇s annealing temperature on the CIGS thin-film structure,surface morphology and optical properties was studied systematically,and the results showed that the precusor＇s annealing temperature should be exactly controlled at 350℃ in the three-stage coevaporation process so as to benefit the preparation of single-phase brass CIGS films whose near-infrared optical reflectivity shoued be below 2%.