Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into thenanometer regime, quantum mechanical effects are becoming more and more significant.In this work, a model for thesurrounding-gate (SG) nMOSFET is developed.The Schrdinger equation is solved analytically.Some of the solutionsare verified via results obtained from simulations.It is found that the percentage of the electrons with lighter conductivitymass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases.Thecentroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carrierswill suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.

As the channel length of metal-oxide-semiconductor field-effect transistors （MOSFETs） scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate （SG） nMOSFET is developed. The SchrSdinger equation is solved analytically. Some of the solutions are verified via results obtained from simulations. It is found that the percentage of the electrons with lighter conductivity mass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases. The eentroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carriers will suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.