摘要
3C-SiC heteroepitaxial layers were grown on Si substrates using a horizontal,hot-wall low pressure chemical vapor deposition system.The crystal quality,surface morphology and thickness uniformity of the layers were characterized by X-ray diffraction,atomic force microcopy and Fourier transform infrared spectroscopy,respectively.Growth of the epitaxial layer was determined to follow a three-dimensional island mode initially and then switch to a step-flow mode as the growth time increases.
3C-SiC heteroepitaxial layers were grown on Si substrates using a horizontal, hot-wall low pressure chemical vapor deposition system. The crystal quality, surface morphology and thickness uniformity of the layers were characterized by X-ray diffraction, atomic force microcopy and Fourier transform infrared spectroscopy, respectively. Growth of the epitaxial layer was determined to follow a three-dimensional island mode initially and then switch to a step-flow mode as the growth time increases.
基金
supported by the National Natural Science Foundation of China(60876061)
the Pre-research Project(51308040302)
