摘要
采用溶胶-凝胶(Sol-Gel)法制备了铌元素(Nb)取代Ti元素的Bi4Ti3O12(BTN)铁电薄膜,研究不同掺杂浓度,不同退火温度等工艺对BTN薄膜的微观特性及剩余极化强度、矫顽场等电性能的影响。研究表明,650℃进行退火的BTN薄膜生长形态,晶粒开始呈棒状生长;当温度高于850℃时,薄膜的c轴生长取向增长趋势不再明显。铁电性方面,对Ti进行2%掺杂取代的BTN薄膜的铁电性能最佳。从而获得了BTN薄膜制备的合理工艺参数。
In order to master the correct techniques, in this experiment, we use sol-gel meth- od to prepare BIT film to research the anneal temperature＇s effects on the micro-structure of the film. The research shows that with the growth of the temperature, c-orientation of BIT is improved. The particles in the BIT film begins to grow in the form of stick-like structure with the annealing temperature is higher than 650℃. When the annealing temperature is higher than 850℃, the trend of e orientation growth become not so obvious.
出处
《信息记录材料》
2010年第5期28-32,共5页
Information Recording Materials
