掺铝氧化锌透明导电膜的研究进展

Research Progress of Transparent Conductive Aluminum-doped Zinc Oxide Films

掺铝氧化锌(AZO)透明导电薄膜作为一种性能优异的多功能材料引起了研究人员的普遍关注,被认为是当前极具发展潜力的传统铟锡氧化物(ITO)薄膜的替代者。综述了AZO薄膜的不同制备工艺,并叙述了衬底温度、Al掺杂量、氧分压、退火条件、同质缓冲层5个因素对薄膜的结构以及光电性能的影响。针对AZO透明导电薄膜的研究现状,提出了今后的研究方向:理论与经验相结合,优化工艺设备,在提高薄膜透光率的同时进一步降低其表面电阻和制造成本,并不断开拓AZO薄膜新的应用领域。

As a high performance multi-functional material, aluminum-doped zinc oxide （AZO） transparent conductive film has caused researchers＇ widespread concern, and is considered the replacer of current great potential traditional indium tin oxide （ITO） films. Different preparation processes of AZO thin films are reviewed. The effects of substrate temperature, Al-doped, oxygen partial pressure, annealing conditions and homogeneous buffer layer on the structure, optical and electrical properties of the films are described. The future research directions according to the current study are proposed： theories should be combined with experience, and optimize process equipment, mean- while, enhance the transmittance of the films and further reduce the surface resistance and manufacture costs simulta- neously and constantly open up new AZO thin films applications.