高离化态Si的束箔光谱的理论分析

Theoretical analysis of beam foil spectrum for highly ionized Si

用ＨＸＢ方法计算了Ｓｉ离子高离化态束箔光谱的跃迁波长、振子强度、跃迁几率以及能级寿命等．对不同束流能量入射下的Ｓｉ离子谱进行了具体分析．

Wavelength,oscillator strengths,transition probabilities and level lifetimes are calculated for foil excited highly ionized Si with multiconfiguration HXR method.The spectrum of Si ions in several beam energies are analysed.Comparisons with existing experimental results are given.