电沉积法制备La掺杂ZnO薄膜及其光致发光性能

Electrodeposited Fabrication and Photoluminescent Property of La-doped ZnO Thin Films

以乌洛托品为络合剂,采用电化学沉积法成功地制备出La掺杂ZnO薄膜。通过对样品的XRD表征,得出生长的样品为ZnO纤锌矿结构,(002)衍射峰随掺杂La3+浓度的增加而向更小角度方向移动,表明少量La3+掺杂进入了ZnO点阵结构中。EDS测量结果显示,La3+以替代的形式进入ZnO晶格中,掺入量为2.4%(原子分数)左右。由XPS测量结果可知,镧离子在薄膜中以+3价的形式存在,PL测量结果进一步证明了La3+能够取代ZnO晶格中Zn2+的格位。

La-doped ZnO thin films are successfully synthesized via a electrodeposition route, using hexameth- ylenetetramine as the complex agent. The XRD results show that ZnO films possess a wurtzite crystal structure and the （002） diffraction peak shifts to a more small angle with La concentration increasing, which indicate that a small quantity of La atoms are incorporated into the ZnO lattices. The EDS result shows that La atoms substitute Zn atoms positions to incorporate into nanocrystal, the dopant content is about 2. 4%（atomic fraction）. The XPS spectra show that the La ions have a chemical valence of ＋3. Furthermore PL spectrum shows Laa＋ ions doped into the ZnO crystal lattices by substituting Zn^2＋ ions.