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双极型集成电路可靠性技术 被引量:8

Reliability Technology for Bipolar Integrated Circuits
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摘要 介绍了影响双极型集成电路可靠性的主要因素,重点分析了当前国内外双极型集成电路可靠性的研究方法。通过在设计、工艺、原材料和元器件等方面采取对策和措施,可达到提高双极型集成电路可靠性的目的。 Major problems associated with reliability of bipolar ICs were discussed.Techniques to investigate reliability of bipolar IC's were described in particular.It is concluded that the reliability of bipolar IC's could be improved by using proper design techniques or processing technologies,and choosing right materials or components.
出处 《微电子学》 CAS CSCD 北大核心 2010年第5期747-753,共7页 Microelectronics
关键词 双极型集成电路 可靠性 失效模式 辐射加固 Bipolar IC Reliability Failure mode Radiation hardening
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参考文献16

  • 1FANTINI F. Reliability problems with VLSI [J]. Microelectronics Reliability, 1984, 24(2): 275-596.
  • 2HORIUCHI T. In-circuit hot-carrier model and its ap plication to inverter chain optimization [J].IEEE Trans Elec Dev, 1990,43(4):1428-1432.
  • 3LEBLEBICI Y, KANG S M. Simulation of hot-carrier induced MOS circuit degradation for VLSI reliability analysis [J]. IEEE Trans Reliability, 1994, 43 (2): 197-206.
  • 4ZHAO J. Current gain increase of n-p-n transistors by electromigration of atomic hydrogen in emitter polysilicon [J].IEEE Trans Elee Dev, 1990, 37 (7): 1698- 1706.
  • 5王长河.微米纳米新型微电子器件可靠性技术发展方向研讨[J].半导体情报,1998,35(2):1-8. 被引量:5
  • 6GLASER U, ESMARK K, STREIBL M, et al. SCR operation mode of diode strings for ESD protection [J]. Microelec Reliab, 2007, 47(7): 1044-1053.
  • 7王长河.星用微电子器件辐射效应及加固途径分析[J].半导体情报,1996,33(4):6-14. 被引量:7
  • 8CLAEYS C, SIMOEN E. Radiation effects in ad- vanced semiconductor materials and devices[M].北京:国防工业出版社,2008.
  • 9BOCH J, FLEETWOOD D M, DUCRET S, et al. Effect of switching from high to low dose rate on linear bipolar technology radiation response [J]. IEEE Trans Nucl Sci, 2004, 51(5) : 2896-2902.
  • 10PERSHENKOV V S, SLESAREV A Y, BELYAK OV V V, et al. Effect of aging on radiation response of bipolar transistors [J]. IEEE Trans Nuet Sci, 2001,48(6) : 2164-2169.

二级参考文献26

  • 1GJB/Z299C-2006,电子设备可靠性预计手册[S].
  • 2PD IEC TR 62380-2004 ,Reliability Data Handbook - Universal Model for Reliability Prediction of Eleetronies Components, PCBs and Equipment [S] .
  • 3JESD 30D-2006, Descriptive Designation System for Semiconductor-Device Packages [S] .
  • 4IPC 7351-2005, Generic Requirements for Surface Mount Design and Land Pattern Standard [S] .
  • 5RIAC-HDBK-217Plus-2006, Handbook of217Plus^TM Reliability Prediction Models [S] .
  • 6Thomas R W. Microcircuit package gas analysis[A]. IEEE Proc the IEEE 14th Ann Reliab Phys Symp[C]. 1976.
  • 7Epstein D. How to test for one-way leakers[J]. Hybrid Cricuit Technol, 1988.
  • 8Perkins K L. Investigation of Package Sealing Using Organic Adhesives[A].ISHM Conf[C].1977.
  • 9Greenhouse H. Hermiticity of Electronic Packages. USA: William Andrew Publishing, LLC, 2000.
  • 10BAO Z L,TIMOTHY D S,TOM C L,et al.Reliability challenges for copper interconnects[J].Microelectronics Reliability,2004,44(5):365-380.

共引文献36

同被引文献28

  • 1张春华,温熙森,陈循.加速寿命试验技术综述[J].兵工学报,2004,25(4):485-490. 被引量:101
  • 2刘婧,吕长志,李志国,郭春生,冯士维.电子元器件加速寿命试验方法的比较[J].半导体技术,2006,31(9):680-683. 被引量:22
  • 3刘恩科,朱秉升,罗晋生.半导体物理[M].北京:国防工业出版社,2008,253-256.
  • 4FANTINI F. Reliability problems with VLSI [J]. Mieroelec Reliab, 1984, 24(2) : 275-296.
  • 5GARRARD S. Production implementation of a practical WLR program [C] // IEEE/SEMI Advan Semicond Manufac Conf. South Portland, USA. 1994: 144-146.
  • 6LI Xiaojun. Deep submicron CMOS VLSI circuit reliability modeling, simulation and design [D]. Maryland,USA : University of Maryland, 2005.
  • 7PAPP A, BIERINGER F, KOCH D, et al. Use of test structures for a wafer-level-reliability monitoring [C] //Proc IEEE Int Conf Microelec Test Struc. Munich, Germany. 1996. 267-271.
  • 8KACZER B, DEGRAEVE R, RASRAS M, et al. Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability [J]. IEEE Trans Elec Dev, 2002, 49(3): 500-506.
  • 9KACZER B, DEGRAEVE R, RASRAS M, et al. Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study [J]. Microelec Reliab, 2002, 42(5): 555-564.
  • 10MIL-PRF-38535J. General specification for integrated circuits (microcircuits) manufacturing [S]. Washington: Department of Defense, 2007.

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