Si衬底上生长ZnO薄膜成熟化的研究

The Investigation for ZnO Thin Films Ripening on Si Substrate

用电子束反应蒸发(REBE)方法在Si和白宝石衬底上低温生长了ZnO晶体薄膜.测量结果表明ZnO晶粒具有类柱状的生长特性,并且首次发现Si基ZnO外延层生长的Ostwald"成熟化"(ripening)过程.研究结果还表明这种"成熟化"出现和衬底结构有关,而且"成熟化"并不影响薄膜的生长取向;光荧光激发光谱(PLE)测量显示,在330～350 nm区域有一个较宽的荧光激发峰,该宽峰跟掩埋在外延层内部的2种尺寸的ZnO量子点有关.

ZnO crystal films were grown on Si and Sapphire using reactive electron beam evaporation technology at low temperature.The measurement results showed that it was a pillar-like propertie to ZnO thin film growth,and an Ostwald ripening was suffered during ZnO thin films growth.Moreover the research results showed that the phenomenon of ripening process was related to the substrate structures,and ripening process did not affect on growth oriented.The photoluminescence excitation（PLE） characterizations revealed the continuum absorption of the samples grown on sapphire.However,in the PLE spectra of the ZnO films grown on Si（001） substrates,a broad peak appears at 330～350 nm,which showed the two types of formation of ZnO quantum dot structures on Si（001） explained by ripening.