摘要
An Al-doped ZnO/p-Si heterojunction is fabricated by a laser molecular beam epitaxy technique. The abnormally high ideality factors （n 〉〉 2） of the prepared heterojunction are observed in the interim bias voltage range. A theoretical model is proposed to understand the much higher ideality factor of the special heterojunction diode. The ZnO：Al film shows metal-like conductivity with the electrical resistivity about 6.56 × 10-4 Ω·cm at room temperature. The temperature dependence of the photovoltage indicates that the photovoltaic effect of the Al-doped ZnO based heterojunction can be changed by the intrinsic metal-semiconductor transition at 120 K.
An Al-doped ZnO/p-Si heterojunction is fabricated by a laser molecular beam epitaxy technique. The abnormally high ideality factors （n 〉〉 2） of the prepared heterojunction are observed in the interim bias voltage range. A theoretical model is proposed to understand the much higher ideality factor of the special heterojunction diode. The ZnO：Al film shows metal-like conductivity with the electrical resistivity about 6.56 × 10-4 Ω·cm at room temperature. The temperature dependence of the photovoltage indicates that the photovoltaic effect of the Al-doped ZnO based heterojunction can be changed by the intrinsic metal-semiconductor transition at 120 K.
基金
Supported by the NPU Foundation for Fundamental Research under Grant Nos NPU-FFR-JC200821 and JC201048, the National Natural Science Foundation of China under Grant No 50702046, and the NWPU ＂Aoxiang Star＂ project.
