CMOS/SOD抗核加固电路辐照后的恢复特性

The Recovery Characteristics of Radiated C M O S/ S O D Circuit

以金刚石膜作为绝缘埋层， 利用金刚石膜上的薄层硅（ Ｓ Ｏ Ｄ）技术， 制作 ５４ Ｈ Ｃ Ｔ０３ Ｃ Ｍ Ｏ Ｓ／ Ｓ Ｏ Ｄ 结构的集成电路． 对该电路在辐照后的恢复特性进行研究． 结果表明， Ｓ Ｏ Ｄ 电路在大剂量辐照后的恢复能力明显强于体硅电路； 常规非辐照环境下的高温退火工艺更有利于辐照后的 Ｓ Ｏ Ｄ

Diam ond film w as used as buried insulator in silicon on diam ond ( S O D) technology.54 H C T03 C M O S/ S O D integrated circuit w as fabricated by using S O D w afer. The recovery character istics of the S O D circuit under radiation w ere studied, and the results show that the recovery ability ofthe S O D circuit is clearly higher than that of bulk silicon circuit. Annealing technique is advandageousto the quick recovery of the radiated S O D circuit.